IC DRAM 512MBIT PARALLEL 66TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 167 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C1474BV25-200BGITCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
7134SA70J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS61NLF102418-7.5TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
M25PX80-VMW6TG TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO |
|
CAT28LV64WI-25TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IS42S16400F-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
MT46V64M8TG-6T L:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IS61NLF102418-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
W25X32VSSIGWinbond Electronics Corporation |
IC FLASH 32MBIT SPI 75MHZ 8SOIC |
|
AT28C010E-12LM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 44CLCC |
|
7035L20PFRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
W632GU8MB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
70V9279L12PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |