IC DRAM 512MBIT PARALLEL 66TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 167 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61NLF102418-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
W25X32VSSIGWinbond Electronics Corporation |
IC FLASH 32MBIT SPI 75MHZ 8SOIC |
|
AT28C010E-12LM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 44CLCC |
|
7035L20PFRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
W632GU8MB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
70V9279L12PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
IS46TR16640A-15GBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
W25Q32FVSSIFWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
AT93C86-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8SOIC |
|
IS42S32160B-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |
|
STK14D88-NF25TRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
AT49BV161-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
MT29F4G16ABBDAHC:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |