IC FLASH 512MBIT PARALLEL 56TSOP
Type | Description |
---|---|
Series: | GL-T |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 110 ns |
Voltage - Supply: | 2.7V ~ 3.6V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TC58BVG0S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 63TFBGA |
|
BR24G32FVM-3GTTRROHM Semiconductor |
IC EEPROM 32KBIT I2C 8MSOP |
|
CY7C1049CV33-15ZCRochester Electronics |
STANDARD SRAM, 512KX8, 15NS |
|
GD25VE20CTIGGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
25AA080B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
71V3576S133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
71V3577S85BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M24C64-DRDW8TP/KSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
IS43LD32640B-18BPLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
GS8662DT38BGD-500IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
GS82564Z18GB-250IGSI Technology |
IC SRAM 288MBIT PAR 119FPBGA |
|
71V65703S85BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT29F512G08EEHAFJ4-3R:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |