







MEMS OSC XO 72.0000MHZ H/LV-CMOS
SLIC, 2-4 CONVERSION, BIPOLAR
IC SRAM 9MBIT PARALLEL 165CABGA
OPTOISO 3.75KV 2CH PHVOLT 8SMD
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Synchronous, SDR (ZBT) |
| Memory Size: | 9Mb (256K x 36) |
| Memory Interface: | Parallel |
| Clock Frequency: | - |
| Write Cycle Time - Word, Page: | - |
| Access Time: | 8.5 ns |
| Voltage - Supply: | 3.135V ~ 3.465V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 165-TBGA |
| Supplier Device Package: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
MT29F512G08EEHAFJ4-3R:AMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
|
BR95160-WMN6TPROHM Semiconductor |
IC EEPROM 16KBIT SPI 5MHZ 8SO |
|
|
93C56C-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
|
SST38VF6404-90-5I-B3KERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
|
MT53E768M32D4DT-053 AIT:E TRMicron Technology |
IC DRAM 24GBIT 1.866GHZ 200VFBGA |
|
|
IS61C6416AL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
|
25LC080C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
|
AT24C256C-XHL-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8TSSOP |
|
|
041841QLAD-5Rochester Electronics |
256KX18 SRAM |
|
|
STK14C88-5K45MRochester Electronics |
32KX8 NON-VOLATILE SRAM, 45NS, C |
|
|
71V67703S80BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
|
71V416S12YRochester Electronics |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
|
UPD46184182BF1-E40-EQ1Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS |