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Y00621K82000B9L

Y00621K82000B9L

RES 1.82K OHM 0.6W 0.1% RADIAL

44-CBSF-3.0X4.5X0.4

44-CBSF-3.0X4.5X0.4

RF SHIELD 3" X 4.5" THROUGH HOLE

IRG8CH106K10F

IRG8CH106K10F

IGBT 1200V 110A DIE

IRG8CH106K10F

IRG8CH106K10F

Image is for reference, please contact us to get the real picture

Part No :

IRG8CH106K10F

Manufacturer
IR (Infineon Technologies)
Description
IGBT 1200V 110A DIE
Catalog
Transistors - IGBTs - Single
Availability
329732 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IRG8CH106K10F PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):-
Current - Collector Pulsed (Icm):-
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 110A
Power - Max:-
Switching Energy:-
Input Type:Standard
Gate Charge:700 nC
Td (on/off) @ 25°C:80ns/380ns
Test Condition:600V, 110A, 1Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
IRG8CH106K10F is available at GangBo-ic.com, Please review product page below for detailed information, including IRG8CH106K10F price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRG8CH106K10F to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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