INSULATED GATE BIPOLAR TRANSISTO
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 650 V |
Current - Collector (Ic) (Max): | 118 A |
Current - Collector Pulsed (Icm): | 224 A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 45A |
Power - Max: | 543 W |
Switching Energy: | - |
Input Type: | Standard |
Gate Charge: | 203 nC |
Td (on/off) @ 25°C: | 15ns/100ns |
Test Condition: | 433V, 45A, 4.3Ohm, 15V |
Reverse Recovery Time (trr): | 80 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | T-MAX™ [B2] |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SIGC42T60SNCX1SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
AUXMIGP4063DIR (Infineon Technologies) |
IGBT 600V TO-247 COPAK |
![]() |
SIGC42T60NCX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
SIGC81T60NCX1SA5IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
XGB8206ATIWickmann / Littelfuse |
IGBT N-CH 20A 350V D2PAK |
![]() |
SIGC10T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 20A WAFER |
![]() |
SIGC15T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 30A WAFER |
![]() |
SIGC12T60NCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
![]() |
LGB8245TIWickmann / Littelfuse |
IGBT 490V 20A 150W D2PAK3 |
![]() |
NGTD28T65F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 650V DIE |
![]() |
SIGC08T60EX1SA1IR (Infineon Technologies) |
IGBT CHIP |
![]() |
IGC03T60TEX7SA2IR (Infineon Technologies) |
IGBT 600V 3A WAFER |
![]() |
IXGM20N60AWickmann / Littelfuse |
POWER MOSFET TO-3 |