Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 600 V |
Current - Collector (Ic) (Max): | 50 A |
Current - Collector Pulsed (Icm): | 100 A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 30A |
Power - Max: | 200 W |
Switching Energy: | - |
Input Type: | Standard |
Gate Charge: | 180 nC |
Td (on/off) @ 25°C: | 100ns/500ns |
Test Condition: | - |
Reverse Recovery Time (trr): | 200 ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-204AE |
Supplier Device Package: | TO-204AE |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRG7CH20K10EFIR (Infineon Technologies) |
IGBT 1200V DIE |
|
XGD8290TIWickmann / Littelfuse |
IGBT N-CH 20A D2PAK |
|
IRGC20B60KBIR (Infineon Technologies) |
IGBT CHIP |
|
LGD18N45THWickmann / Littelfuse |
IGBT 450V 18A DPAK |
|
SIGC11T60SNCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC03T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 4A WAFER |
|
IRG7CH81K10EFIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
SIGC84T120R3LEX1SA7IR (Infineon Technologies) |
IGBT 1200V 75A DIE |
|
SIGC04T60EX1SA2IR (Infineon Technologies) |
IGBT CHIP |
|
SIGC18T60NCX7SA2IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC42T60SNCX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
75099Microsemi |
TRANSISTOR |
|
IRGC75B60UBIR (Infineon Technologies) |
IGBT CHIP |