Type | Description |
---|---|
Series: | * |
Package: | Bulk |
Part Status: | Obsolete |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | - |
Current - Collector (Ic) (Max): | - |
Current - Collector Pulsed (Icm): | - |
Vce(on) (Max) @ Vge, Ic: | - |
Power - Max: | - |
Switching Energy: | - |
Input Type: | - |
Gate Charge: | - |
Td (on/off) @ 25°C: | - |
Test Condition: | - |
Reverse Recovery Time (trr): | - |
Operating Temperature: | - |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRGC75B60UBIR (Infineon Technologies) |
IGBT CHIP |
|
IRGIB4615DPBFIR (Infineon Technologies) |
IGBT 600V FULLPAK220 COPAK |
|
LGB8207THWickmann / Littelfuse |
IGBT 365V 20A 165W D2PAK3 |
|
LGB8202ARIWickmann / Littelfuse |
IGBT 440V 20A 150W D2PAK |
|
NGTD14T65F2WPSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH FIELD STOP 650V DIE |
|
IRG7CH35UEDIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
IXYH8N250CWickmann / Littelfuse |
IGBT 2500V 29A TO247AD |
|
IXGM17N100AWickmann / Littelfuse |
POWER MOSFET TO-3 |
|
SIGC42T60UNX1SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
SIGC10T60EX7SA3IR (Infineon Technologies) |
IGBT 3 CHIP 600V 20A WAFER |
|
SIGC05T60SNCX1SA4IR (Infineon Technologies) |
IGBT 3 CHIP 600V WAFER |
|
IRG7CH73K10EF-RIR (Infineon Technologies) |
IGBT 1200V ULTRA FAST DIE |
|
SIGC08T60EX7SA1IR (Infineon Technologies) |
IGBT 3 CHIP 600V 15A WAFER |