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FGL60N100BNTD

FGL60N100BNTD

IGBT 1000V 60A 180W TO264

SMA5J30AHM3/I

SMA5J30AHM3/I

TVS DIODE DO-214AC SMA

FGL60N100BNTD

FGL60N100BNTD

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Part No :

FGL60N100BNTD

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1000V 60A 180W TO264
Catalog
Transistors - IGBTs - Single
Availability
10232 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FGL60N100BNTD PDF
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT and Trench
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60A
Power - Max:180 W
Switching Energy:-
Input Type:Standard
Gate Charge:275 nC
Td (on/off) @ 25°C:140ns/630ns
Test Condition:600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr):1.2 µs
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-264-3, TO-264AA
Supplier Device Package:TO-264-3
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