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NGTB10N60R2DT4G

NGTB10N60R2DT4G

INSULATED GATE BIPOLAR TRANSISTO

NGTB10N60R2DT4G

NGTB10N60R2DT4G

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Part No :

NGTB10N60R2DT4G

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
12630 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 23 - Sep 27 2024
PDF
NGTB10N60R2DT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 10A
Power - Max:72 W
Switching Energy:412µJ (on), 140µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:48ns/120ns
Test Condition:300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr):90 ns
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NGTB10N60R2DT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NGTB10N60R2DT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NGTB10N60R2DT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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