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SGB02N120ATMA1

SGB02N120ATMA1

IGBT, 6.2A I(C), 1200V V(BR)CES,

SGB02N120ATMA1

SGB02N120ATMA1

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Part No :

SGB02N120ATMA1

Manufacturer
Rochester Electronics
Description
IGBT, 6.2A I(C), 1200V V(BR)CES,
Catalog
Transistors - IGBTs - Single
Availability
10235 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
SGB02N120ATMA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):6.2 A
Current - Collector Pulsed (Icm):9.6 A
Vce(on) (Max) @ Vge, Ic:3.6V @ 15V, 2A
Power - Max:62 W
Switching Energy:220µJ
Input Type:Standard
Gate Charge:11 nC
Td (on/off) @ 25°C:23ns/260ns
Test Condition:800V, 2A, 91Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
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