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HGTP10N120BN

HGTP10N120BN

IGBT 1200V 35A 298W TO220AB

HGTP10N120BN

HGTP10N120BN

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Part No :

HGTP10N120BN

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 1200V 35A 298W TO220AB
Catalog
Transistors - IGBTs - Single
Availability
14400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
HGTP10N120BN PDF
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:298 W
Switching Energy:320µJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/165ns
Test Condition:960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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