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NGTB60N65FL2WG

NGTB60N65FL2WG

IGBT FIELD STOP 650V 100A TO247

CDR31BP181BJSR-ZANAE

CDR31BP181BJSR-ZANAE

CAP CER SMP MLC HI-REL

NGTB60N65FL2WG

NGTB60N65FL2WG

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Part No :

NGTB60N65FL2WG

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT FIELD STOP 650V 100A TO247
Catalog
Transistors - IGBTs - Single
Availability
10115 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
NGTB60N65FL2WG PDF
Type Description
Series:-
Package:Tube
Part Status:Active
IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):100 A
Current - Collector Pulsed (Icm):240 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 60A
Power - Max:595 W
Switching Energy:1.59mJ (on), 660µJ (off)
Input Type:Standard
Gate Charge:318 nC
Td (on/off) @ 25°C:117ns/265ns
Test Condition:400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):96 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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