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GCM31MR71H684KA55L

GCM31MR71H684KA55L

CAP CER 0.68UF 50V X7R 1206

FGB5N60UNDF

FGB5N60UNDF

INSULATED GATE BIPOLAR TRANSISTO

FGB5N60UNDF

FGB5N60UNDF

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Part No :

FGB5N60UNDF

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
73530 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
FGB5N60UNDF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):10 A
Current - Collector Pulsed (Icm):15 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 5A
Power - Max:73.5 W
Switching Energy:80µJ (on), 70µJ (off)
Input Type:Standard
Gate Charge:12.1 nC
Td (on/off) @ 25°C:5.4ns/25.4ns
Test Condition:400V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr):35 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB (D²PAK)
FGB5N60UNDF is available at GangBo-ic.com, Please review product page below for detailed information, including FGB5N60UNDF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FGB5N60UNDF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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