IKW50N65ET7XKSA1
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, TrenchStop™ |
Package: | Tube |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650 V |
Current - Collector (Ic) (Max): | 50 A |
Current - Collector Pulsed (Icm): | 150 A |
Vce(on) (Max) @ Vge, Ic: | 1.65V @ 15V, 50A |
Power - Max: | 273 W |
Switching Energy: | 1.2mJ (on), 850µJ (off) |
Input Type: | Standard |
Gate Charge: | 290 nC |
Td (on/off) @ 25°C: | 26ns/350ns |
Test Condition: | 400V, 50A, 9Ohm, 15V |
Reverse Recovery Time (trr): | 93 ns |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | PG-TO247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IKW15N120T2FKSA1IR (Infineon Technologies) |
IGBT 1200V 30A 235W TO247-3 |
|
FGH60N60SMDSanyo Semiconductor/ON Semiconductor |
IGBT FIELD STOP 600V 120A TO247 |
|
HGT1S20N60C3S9ASanyo Semiconductor/ON Semiconductor |
IGBT 600V 45A TO263AB |
|
IRG8P25N120KD-EPBFRochester Electronics |
IRG8P25N120 - DISCRETE IGBT WITH |
|
STGB15M65DF2STMicroelectronics |
TRENCH GATE FIELD-STOP IGBT M SE |
|
FGA40T65SHDSanyo Semiconductor/ON Semiconductor |
IGBT TRENCH/FS 650V 80A TO3PN |
|
APT20GT60BRDQ1GRoving Networks / Microchip Technology |
IGBT 600V 43A 174W TO247 |
|
IXGT32N170Wickmann / Littelfuse |
IGBT 1700V 75A 350W TO268 |
|
IKW30N65EL5XKSA1IR (Infineon Technologies) |
IGBT 650V 30A FAST DIODE TO247-3 |
|
FGA20S125P-SN00336Sanyo Semiconductor/ON Semiconductor |
IGBT 1250V 20A 250W TO-3PN |
|
IKW20N60TARochester Electronics |
IKW20N60 - AUTOMOTIVE IGBT DISCR |
|
IXYX100N120C3Wickmann / Littelfuse |
IGBT 1200V 188A 1150W PLUS247 |
|
IKFW90N60EH3XKSA1IR (Infineon Technologies) |
INDUSTRY 14 |