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HGT1S20N60C3S9A

HGT1S20N60C3S9A

IGBT 600V 45A TO263AB

HGT1S20N60C3S9A

HGT1S20N60C3S9A

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Part No :

HGT1S20N60C3S9A

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT 600V 45A TO263AB
Catalog
Transistors - IGBTs - Single
Availability
474847 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
PDF
HGT1S20N60C3S9A PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):45 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 20A
Power - Max:164 W
Switching Energy:295µJ (on), 500µJ (off)
Input Type:Standard
Gate Charge:91 nC
Td (on/off) @ 25°C:28ns/151ns
Test Condition:480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
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