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HGT1S2N120CN

HGT1S2N120CN

N-CHANNEL IGBT

HGT1S2N120CN

HGT1S2N120CN

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Part No :

HGT1S2N120CN

Manufacturer
Rochester Electronics
Description
N-CHANNEL IGBT
Catalog
Transistors - IGBTs - Single
Availability
87688 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
HGT1S2N120CN PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):13 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 2.6A
Power - Max:104 W
Switching Energy:96µJ (on), 355µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:25ns/205ns
Test Condition:960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:TO-262
HGT1S2N120CN is available at GangBo-ic.com, Please review product page below for detailed information, including HGT1S2N120CN price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HGT1S2N120CN to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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