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HGT1S2N120CN

HGT1S2N120CN

N-CHANNEL IGBT

HGT1S2N120CN

HGT1S2N120CN

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Part No :

HGT1S2N120CN

Manufacturer
Rochester Electronics
Description
N-CHANNEL IGBT
Catalog
Transistors - IGBTs - Single
Availability
87688 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 21 - Feb 25 2025
PDF
HGT1S2N120CN PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):13 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 2.6A
Power - Max:104 W
Switching Energy:96µJ (on), 355µJ (off)
Input Type:Standard
Gate Charge:30 nC
Td (on/off) @ 25°C:25ns/205ns
Test Condition:960V, 2.6A, 51Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:TO-262
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