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HGTG5N120BND

HGTG5N120BND

INSULATED GATE BIPOLAR TRANSISTO

HGTG5N120BND

HGTG5N120BND

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Part No :

HGTG5N120BND

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
10350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 27 - Jul 01 2024
PDF
HGTG5N120BND PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):21 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 5A
Power - Max:167 W
Switching Energy:450µJ (on), 390µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:22ns/160ns
Test Condition:960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr):65 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
HGTG5N120BND is available at GangBo-ic.com, Please review product page below for detailed information, including HGTG5N120BND price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HGTG5N120BND to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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