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HGTG10N120BND

HGTG10N120BND

IGBT NPT 1200V 35A TO247-3

HGTG10N120BND

HGTG10N120BND

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Part No :

HGTG10N120BND

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT NPT 1200V 35A TO247-3
Catalog
Transistors - IGBTs - Single
Availability
10374 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 23 - Feb 27 2025
PDF
HGTG10N120BND PDF
Type Description
Series:-
Package:Tube
Part Status:Not For New Designs
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:298 W
Switching Energy:850µJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/165ns
Test Condition:960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):70 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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