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APT50GP60B2DQ2G

APT50GP60B2DQ2G

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APT50GP60B2DQ2G

APT50GP60B2DQ2G

Image is for reference, please contact us to get the real picture

Part No :

APT50GP60B2DQ2G

Manufacturer
Roving Networks / Microchip Technology
Description
IGBT 600V 150A 625W TMAX
Catalog
Transistors - IGBTs - Single
Availability
674567 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2025
PDF
APT50GP60B2DQ2G PDF
Type Description
Series:POWER MOS 7®
Package:Tube
Part Status:Not For New Designs
IGBT Type:PT
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):190 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 50A
Power - Max:625 W
Switching Energy:465µJ (on), 635µJ (off)
Input Type:Standard
Gate Charge:165 nC
Td (on/off) @ 25°C:19ns/85ns
Test Condition:400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:-
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