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IRG7PH35UD1PBF

IRG7PH35UD1PBF

IGBT W/ULTRA-LOW VF DIODE FOR IN

IRG7PH35UD1PBF

IRG7PH35UD1PBF

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Part No :

IRG7PH35UD1PBF

Manufacturer
Rochester Electronics
Description
IGBT W/ULTRA-LOW VF DIODE FOR IN
Catalog
Transistors - IGBTs - Single
Availability
23921 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 04 - Dec 08 2024
PDF
IRG7PH35UD1PBF PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 20A
Power - Max:179 W
Switching Energy:620µJ (off)
Input Type:Standard
Gate Charge:130 nC
Td (on/off) @ 25°C:-/160ns
Test Condition:600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247AC
IRG7PH35UD1PBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRG7PH35UD1PBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRG7PH35UD1PBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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