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NGD18N45CLBT4G

NGD18N45CLBT4G

INSULATED GATE BIPOLAR TRANSISTO

NGD18N45CLBT4G

NGD18N45CLBT4G

Image is for reference, please contact us to get the real picture

Part No :

NGD18N45CLBT4G

Manufacturer
Rochester Electronics
Description
INSULATED GATE BIPOLAR TRANSISTO
Catalog
Transistors - IGBTs - Single
Availability
10360 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 24 - Feb 28 2025
PDF
NGD18N45CLBT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):500 V
Current - Collector (Ic) (Max):18 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 4.5V, 7A
Power - Max:115 W
Switching Energy:-
Input Type:Logic
Gate Charge:-
Td (on/off) @ 25°C:420ns/2.9µs
Test Condition:300V, 1kOhm, 5V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
NGD18N45CLBT4G is available at GangBo-ic.com, Please review product page below for detailed information, including NGD18N45CLBT4G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NGD18N45CLBT4G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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