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HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

N-CHANNEL IGBT

HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

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Part No :

HGT1S3N60A4DS9A

Manufacturer
Rochester Electronics
Description
N-CHANNEL IGBT
Catalog
Transistors - IGBTs - Single
Availability
14713 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
HGT1S3N60A4DS9A PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):17 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 3A
Power - Max:70 W
Switching Energy:37µJ (on), 25µJ (off)
Input Type:Standard
Gate Charge:21 nC
Td (on/off) @ 25°C:6ns/73ns
Test Condition:390V, 3A, 50Ohm, 15V
Reverse Recovery Time (trr):29 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
HGT1S3N60A4DS9A is available at GangBo-ic.com, Please review product page below for detailed information, including HGT1S3N60A4DS9A price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HGT1S3N60A4DS9A to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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