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HGT1S10N120BNS

HGT1S10N120BNS

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Part No :

HGT1S10N120BNS

Manufacturer
Rochester Electronics
Description
IGBT, 35A, 1200V, N-CHANNEL, TO-
Catalog
Transistors - IGBTs - Single
Availability
10353 pieces
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
PDF
HGT1S10N120BNS PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:NPT
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):80 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:298 W
Switching Energy:320µJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:100 nC
Td (on/off) @ 25°C:23ns/165ns
Test Condition:960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:TO-263AB
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