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BSM100GB120DN2HOSA1

BSM100GB120DN2HOSA1

IGBT MOD 1200V 150A 800W

BSM100GB120DN2HOSA1

BSM100GB120DN2HOSA1

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Part No :

BSM100GB120DN2HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 150A 800W
Catalog
Transistors - IGBTs - Modules
Availability
905290 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):150 A
Power - Max:800 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 100A
Current - Collector Cutoff (Max):2 mA
Input Capacitance (Cies) @ Vce:6.5 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM100GB120DN2HOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM100GB120DN2HOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM100GB120DN2HOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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