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F475R07W2H3B51BOMA1

F475R07W2H3B51BOMA1

IGBT, 75A, 650V, N-CHANNEL

F475R07W2H3B51BOMA1

F475R07W2H3B51BOMA1

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Part No :

F475R07W2H3B51BOMA1

Manufacturer
Rochester Electronics
Description
IGBT, 75A, 650V, N-CHANNEL
Catalog
Transistors - IGBTs - Modules
Availability
10180 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
PDF
F475R07W2H3B51BOMA1 PDF
Type Description
Series:-
Package:Tray
Part Status:Obsolete
IGBT Type:-
Configuration:Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):75 A
Power - Max:520 W
Vce(on) (Max) @ Vge, Ic:1.55V @ 15V, 37.5A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.7 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
F475R07W2H3B51BOMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including F475R07W2H3B51BOMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for F475R07W2H3B51BOMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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