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FAM65HR51DS2

FAM65HR51DS2

IGBT MODULE 650V 33A 135W

FAM65HR51DS2

FAM65HR51DS2

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Part No :

FAM65HR51DS2

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
IGBT MODULE 650V 33A 135W
Catalog
Transistors - IGBTs - Modules
Availability
875287 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
Type Description
Series:-
Package:Tube
Part Status:Active
IGBT Type:-
Configuration:Half Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):33 A
Power - Max:135 W
Vce(on) (Max) @ Vge, Ic:-
Current - Collector Cutoff (Max):-
Input Capacitance (Cies) @ Vce:4.86 nF @ 400 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:-
Supplier Device Package:-
FAM65HR51DS2 is available at GangBo-ic.com, Please review product page below for detailed information, including FAM65HR51DS2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FAM65HR51DS2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

Phone: 00852-52612101

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  • FAM65HR51DS2 Price
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  • FAM65HR51DS2 Datasheet
  • FAM65HR51DS2 Application
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