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BSM75GD120DN2BOSA1

BSM75GD120DN2BOSA1

IGBT MOD 1200V 103A 520W

BSM75GD120DN2BOSA1

BSM75GD120DN2BOSA1

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Part No :

BSM75GD120DN2BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 103A 520W
Catalog
Transistors - IGBTs - Modules
Availability
915091 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 05 - Feb 09 2025
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):103 A
Power - Max:520 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 75A
Current - Collector Cutoff (Max):1.5 mA
Input Capacitance (Cies) @ Vce:5.1 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM75GD120DN2BOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM75GD120DN2BOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM75GD120DN2BOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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