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BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

IGBT MOD 1200V 50A 350W

BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

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Part No :

BSM50GD120DN2E3226BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 50A 350W
Catalog
Transistors - IGBTs - Modules
Availability
045104 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 06 - Feb 10 2025
Type Description
Series:-
Package:Tray
Part Status:Not For New Designs
IGBT Type:-
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):50 A
Power - Max:350 W
Vce(on) (Max) @ Vge, Ic:3V @ 15V, 50A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:3.3 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
BSM50GD120DN2E3226BOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSM50GD120DN2E3226BOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSM50GD120DN2E3226BOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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