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DF200R12PT4B6BOSA1

DF200R12PT4B6BOSA1

DFXR12P - IGBT MODULE

DF200R12PT4B6BOSA1

DF200R12PT4B6BOSA1

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Part No :

DF200R12PT4B6BOSA1

Manufacturer
Rochester Electronics
Description
DFXR12P - IGBT MODULE
Catalog
Transistors - IGBTs - Modules
Availability
927192 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
PDF
DF200R12PT4B6BOSA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):1.2 V
Current - Collector (Ic) (Max):300 A
Power - Max:1.1 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 200A
Current - Collector Cutoff (Max):15 µA
Input Capacitance (Cies) @ Vce:12.5 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
DF200R12PT4B6BOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including DF200R12PT4B6BOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DF200R12PT4B6BOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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