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RS73G2ATTD71R5B

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FF900R12IE4PBOSA1

FF900R12IE4PBOSA1

IGBT MOD 1200V 900A 20MW

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FF900R12IE4PBOSA1

FF900R12IE4PBOSA1

Image is for reference, please contact us to get the real picture

Part No :

FF900R12IE4PBOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 900A 20MW
Catalog
Transistors - IGBTs - Modules
Availability
17200 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
FF900R12IE4PBOSA1 PDF
Type Description
Series:PrimePack™2
Package:Tray
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):900 A
Power - Max:20 mW
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 900A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:54 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
FF900R12IE4PBOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FF900R12IE4PBOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FF900R12IE4PBOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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