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FF200R12KE3B2HOSA1

FF200R12KE3B2HOSA1

IGBT MOD 1200V 295A 1050W

FF200R12KE3B2HOSA1

FF200R12KE3B2HOSA1

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Part No :

FF200R12KE3B2HOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MOD 1200V 295A 1050W
Catalog
Transistors - IGBTs - Modules
Availability
996899 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):295 A
Power - Max:1050 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:14 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
FF200R12KE3B2HOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FF200R12KE3B2HOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FF200R12KE3B2HOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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