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1825Y1K50391KXT

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FF650R17IE4DB2BOSA1

FF650R17IE4DB2BOSA1

IGBT MODULE 1700V 4150W

FF650R17IE4DB2BOSA1

FF650R17IE4DB2BOSA1

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Part No :

FF650R17IE4DB2BOSA1

Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 1700V 4150W
Catalog
Transistors - IGBTs - Modules
Availability
056905 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
FF650R17IE4DB2BOSA1 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1700 V
Current - Collector (Ic) (Max):-
Power - Max:4150 W
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 650A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:54 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
FF650R17IE4DB2BOSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including FF650R17IE4DB2BOSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FF650R17IE4DB2BOSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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