CABLE FFC 12POS 1.00MM 12"
CAP ALUM 1200UF 400V SCREW
XTAL OSC XO 69.3300MHZ LVPECL
MOSFET N-CH 100V 34A TO267AB
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/592 |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 81mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 125 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
FET Feature: | - |
Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-267AB |
Package / Case: | TO-267AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN62D0LFD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH SOT23 |
|
TPH3206LDG-TRTransphorm |
GANFET N-CH 600V 17A 3PQFN |
|
RS44CA09TQKARenesas Electronics America |
MOSFET P-CH |
|
JAN2N6800Microsemi |
MOSFET N-CH 400V 3A TO39 |
|
IRLC3813EBIR (Infineon Technologies) |
MOSFET N-CH WAFER |
|
TK12J60W,S1VE(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 11.5A TO3P |
|
JAN2N6800UMicrosemi |
MOSFET N-CH 400V 3A 18ULCC |
|
IPC60R070C6UNSAWNX6SA1IR (Infineon Technologies) |
MOSFET N-CH BARE DIE |
|
IXFL60N60Wickmann / Littelfuse |
MOSFET N-CH 600V 60A ISOPLUS264 |
|
IRFCZ44VBIR (Infineon Technologies) |
MOSFET 60V 55A DIE |
|
2SJ601(0)-Z-E1-AZRenesas Electronics America |
TRANSISTOR |
|
IRC530PBFVishay / Siliconix |
MOSFET N-CH 100V 14A TO220-5 |