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TK12J60W,S1VE(S

TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

TK12J60W,S1VE(S

TK12J60W,S1VE(S

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Part No :

TK12J60W,S1VE(S

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 11.5A TO3P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
159415 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
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