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R6530ENZC8

R6530ENZC8

MOSFET N-CH 650V 30A TO3

R6530ENZC8

R6530ENZC8

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Part No :

R6530ENZC8

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 650V 30A TO3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
979297 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 30 - Dec 04 2024
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:4V @ 960µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2.1 nF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3
Package / Case:TO-3P-3 Full Pack
R6530ENZC8 is available at GangBo-ic.com, Please review product page below for detailed information, including R6530ENZC8 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6530ENZC8 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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