MOSFET N-CH 900V 34A ISOPLUS264
Type | Description |
---|---|
Series: | HiPerFET™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 220mOhm @ 19.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 375 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 13400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 580W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOPLUS264™ |
Package / Case: | ISOPLUS264™ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPCA8010-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 200V 5.5A 8SOP |
|
SPP20N60S5HKSA1IR (Infineon Technologies) |
HIGH POWER_LEGACY |
|
RQA0002DNSTB-ERenesas Electronics America |
MOSFET N-CH 16V 3.8A 2HWSON |
|
NP82N04PUG(1)-E1B-AYRenesas Electronics America |
TRANSISTOR |
|
62-0275PBFIR (Infineon Technologies) |
IC MOSFET 8PQFN |
|
AOD520Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH |
|
JANTX2N6802Microsemi |
MOSFET N-CH 500V 2.5A TO205AF |
|
2N6766T1Microsemi |
MOSFET N-CH 200V 30A TO254AA |
|
UPA2396T1P-E1-A#YK1Renesas Electronics America |
MOSFET |
|
TPCA8012-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 40A 8SOP |
|
BUK7L11-34ARC,127NXP Semiconductors |
MOSFET N-CH 34V 75A TO220AB |
|
IPC60R190P6X7SA1IR (Infineon Technologies) |
MOSFET N-CH |
|
GWS4618LIntersil (Renesas Electronics America) |
MOSFET N-CH LGA |