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TSM10N60CI C0

TSM10N60CI C0

MOSFET N-CH 600V 10A ITO220

TSM10N60CI C0

TSM10N60CI C0

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Part No :

TSM10N60CI C0

Manufacturer
TSC (Taiwan Semiconductor)
Description
MOSFET N-CH 600V 10A ITO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
948194 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:750mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1738 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ITO-220
Package / Case:TO-220-3 Full Pack, Isolated Tab
TSM10N60CI C0 is available at GangBo-ic.com, Please review product page below for detailed information, including TSM10N60CI C0 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TSM10N60CI C0 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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