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RQK0609CQDQS#H1

RQK0609CQDQS#H1

MOSFET N-CH 60V 4A UPAK

RQK0609CQDQS#H1

RQK0609CQDQS#H1

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Part No :

RQK0609CQDQS#H1

Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 60V 4A UPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
048204 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 04 - Nov 08 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:UPAK
Package / Case:TO-243AA
RQK0609CQDQS#H1 is available at GangBo-ic.com, Please review product page below for detailed information, including RQK0609CQDQS#H1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RQK0609CQDQS#H1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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