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JAN2N6796

JAN2N6796

MOSFET N-CH 100V 8A TO39

JAN2N6796

JAN2N6796

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Part No :

JAN2N6796

Manufacturer
Microsemi
Description
MOSFET N-CH 100V 8A TO39
Catalog
Transistors - FETs, MOSFETs - Single
Availability
558155 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 03 - Nov 07 2024
Type Description
Series:Military, MIL-PRF-19500/557
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:195mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:28.51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):800mW (Ta), 25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-39
Package / Case:TO-205AF Metal Can
JAN2N6796 is available at GangBo-ic.com, Please review product page below for detailed information, including JAN2N6796 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for JAN2N6796 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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