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IXTI10N60P

IXTI10N60P

MOSFET N-CH 600V 10A TO262

IXTI10N60P

IXTI10N60P

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Part No :

IXTI10N60P

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 600V 10A TO262
Catalog
Transistors - FETs, MOSFETs - Single
Availability
618161 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 03 - Nov 07 2024
PDF
IXTI10N60P PDF
Type Description
Series:PolarHV™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1610 pF @ 25 V
FET Feature:-
Power Dissipation (Max):200W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262 (I2PAK)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IXTI10N60P is available at GangBo-ic.com, Please review product page below for detailed information, including IXTI10N60P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTI10N60P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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