RES SMD 330 OHM 5% 3.5W 2512
SWITCH TOGGLE SPDT 5A 120V
MOSFET N-CH 30V 20A/69A 5DFN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1683 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.55W (Ta), 30.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RJK03P5DPA-00#J5ARochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SJ143(04)-S6-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF640RRochester Electronics |
N-CHANNEL POWER MOSFET |
|
TP65H070LSG-TRTransphorm |
GANFET N-CH 650V 25A PQFN88 |
|
UJ3C065030K3SUnitedSiC |
MOSFET N-CH 650V 85A TO247-3 |
|
IRFF9132Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
STB8N50ET4Rochester Electronics |
NFET D2PAK SPCL 500V TR |
|
FDMS0349Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SQD40N06-14L_T4GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A TO252AA |
|
MSC060SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 39A TO247-4 |
|
2SK2112-T2-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP89N04PDK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO263-3 |
|
IXTY02N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |