GANFET N-CH 650V 25A PQFN88
Type | Description |
---|---|
Series: | TP65H070L |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 85mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4.8V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 600 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 96W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 3-PQFN (8x8) |
Package / Case: | 3-PowerDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UJ3C065030K3SUnitedSiC |
MOSFET N-CH 650V 85A TO247-3 |
|
IRFF9132Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
STB8N50ET4Rochester Electronics |
NFET D2PAK SPCL 500V TR |
|
FDMS0349Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
SQD40N06-14L_T4GE3Vishay / Siliconix |
MOSFET N-CH 60V 40A TO252AA |
|
MSC060SMA070B4Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 39A TO247-4 |
|
2SK2112-T2-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP89N04PDK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO263-3 |
|
IXTY02N120P-TRLWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |
|
BUK7E5R2-100E,127-NXPRochester Electronics |
PFET, 120A I(D), 100V, 0.0052OHM |
|
DMTH8012LPSW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 53.7A PWRDI5060 |
|
G3R45MT17KGeneSiC Semiconductor |
SIC MOSFET N-CH 61A TO247-4 |
|
FDBL9406-F085T6Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 45A/240A 8HPSOF |