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IPA320N20NM3SXKSA1

IPA320N20NM3SXKSA1

MOSFET N-CH 200V 26A TO220

IPA320N20NM3SXKSA1

IPA320N20NM3SXKSA1

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Part No :

IPA320N20NM3SXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 26A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
946394 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:OptiMOS™3
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:32mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 89µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 100 V
FET Feature:-
Power Dissipation (Max):38W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA320N20NM3SXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA320N20NM3SXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA320N20NM3SXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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