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IPA126N10NM3SXKSA1

IPA126N10NM3SXKSA1

MOSFET N-CH 100V 39A TO220

IPA126N10NM3SXKSA1

IPA126N10NM3SXKSA1

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Part No :

IPA126N10NM3SXKSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 39A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
996399 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 14 - Nov 18 2024
Type Description
Series:OptiMOS™3
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.6mOhm @ 39A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):33W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack
IPA126N10NM3SXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA126N10NM3SXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA126N10NM3SXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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