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TK11S10N1L,LQ

TK11S10N1L,LQ

MOSFET N-CH 100V 11A DPAK

TK11S10N1L,LQ

TK11S10N1L,LQ

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Part No :

TK11S10N1L,LQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 11A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
166316 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:28mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 10 V
FET Feature:-
Power Dissipation (Max):65W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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