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SQM200N04-1M1L_GE3

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MOSFET N-CH 40V 200A TO263-7

SQM200N04-1M1L_GE3

SQM200N04-1M1L_GE3

Image is for reference, please contact us to get the real picture

Part No :

SQM200N04-1M1L_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 40V 200A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10427 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
SQM200N04-1M1L_GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:413 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20655 pF @ 25 V
FET Feature:-
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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