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TPN2R503NC,L1Q

TPN2R503NC,L1Q

MOSFET N CH 30V 40A 8TSON-ADV

TPN2R503NC,L1Q

TPN2R503NC,L1Q

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Part No :

TPN2R503NC,L1Q

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 30V 40A 8TSON-ADV
Catalog
Transistors - FETs, MOSFETs - Single
Availability
476247 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
TPN2R503NC,L1Q PDF
Type Description
Series:U-MOSVIII
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Last Time Buy
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:40A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2230 pF @ 15 V
FET Feature:-
Power Dissipation (Max):700mW (Ta), 35W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSON Advance (3.3x3.3)
Package / Case:8-PowerVDFN
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