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FDB1D7N10CL7

FDB1D7N10CL7

MOSFET N-CH 100V 268A D2PAK

FDB1D7N10CL7

FDB1D7N10CL7

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Part No :

FDB1D7N10CL7

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 100V 268A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
506250 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FDB1D7N10CL7 PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:268A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 15V
Rds On (Max) @ Id, Vgs:1.65mOhm @ 100A, 15V
Vgs(th) (Max) @ Id:4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:163 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11600 pF @ 50 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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