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RN731JTTD3920B25

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IPT019N08N5ATMA1

IPT019N08N5ATMA1

MOSFET N-CH 80V 32A/247A 8HSOF

IPT019N08N5ATMA1

IPT019N08N5ATMA1

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Part No :

IPT019N08N5ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 32A/247A 8HSOF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
066106 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
Type Description
Series:OptiMOS™5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 247A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 150A, 10V
Vgs(th) (Max) @ Id:3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs:127 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 40 V
FET Feature:-
Power Dissipation (Max):231W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOF-8-1
Package / Case:8-PowerSFN
IPT019N08N5ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPT019N08N5ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPT019N08N5ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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